55V Single N-Channel Power MOSFET in a TO-220 package.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRFZ48N Product details N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Ground Plane. Low Leakage Inductance Current Transformer. dv/dt controlled by RG. ISD controlled by Duty Factor "D"

IRFZ48N Product details Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ48 www.vishay.com Vishay Siliconix S21-0340-Rev. C, 12-Apr-2021 5 Document Number: 91294 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

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N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.

1996年7月26日 · IRFZ48N PRELIMINARY HEXFET® Power MOSFET PD -----Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power …

IRFZ48N Transistor Datasheet, IRFZ48N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog