2014年9月25日 · The hydrogenation at various temperatures of the (6√3 × 6√3)R30° reconstruction of SiC (0001), the so-called buffer layer graphene (BLG), is investigated. For …

2014年8月18日 · Upon hydrogen exposure at higher temperature (> 700 ° C), hydrogen atoms intercalate at the BLG/SiC interface, inducing the formation of a single layer of quasi-free …

2011年9月1日 · Atomic hydrogen exposures on a monolayer graphene grown on the SiC (0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a …

2022年6月29日 · By systematically observing the initial stage, we found that hydrogen intercalation initiates locally and simultaneously throughout the terrace, followed by the …

The hydrogenation at various temperatures of the (6√3 × 6√3)R30° reconstruction of SiC(0001), the so-called buffer layer graphene (BLG), is investigated. For the BLG, a significant …

2014年2月1日 · We investigate the intercalation of hydrogen at the graphene/SiC (0001) interface through atomistic models characterized by very low strains both in the epitaxial graphene and …

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon …

2010年1月15日 · In the present work we show that dramatic changes are induced by hydrogen exposures on monolayer graphene grown on the silicon terminated 6H–SiC (0 0 0 1) surface. …

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the ð6 p ffiffiffi p ffiffiffi reconstructed initial carbon layer and the SiC …

Graphene grown by CVD technique on 4H-SiC(0001) substrates and hydrogenated at a high temperatures were subjected to SEM investigation with low energy (~0.2 keV) electrons using …